i., o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. rfh25p08, rfh25p10, RFK25P08, rfk25p10 -25a, -100v and -80v, 0.150 ohm, p-channel power mosfets features ? -25a,-100v and-80v ordering information part number rfh25p08 rfh25p10 RFK25P08 rfk25p10 package to-218ac to-218ac to-204ae to-204ae brand rfh25p08 rfh25p10 RFK25P08 rfk25p10 description these are p-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated cir- cuits. symbol note: when ordering, use the entire part number. o s packaging jedecto-218ac jedec to-204ae drain source drain gate drain (flange) source (pin 2) gate (pin 1)
absolute maximum ratings tc = 25c, unless otherwise specified drain to source voltage (note 1 ) ................................... vps drain to gate voltage (rgs = 20ki2) (note 1 ) ........................ vdgr continuous drain current ........................................... ip pulsed drain current (note 3) .................................... iqm gate to source voltage .......................................... vgs maximum power dissipation ........................................ pq linear derating factor ............................................. operating and storage temperature ............................. tj, tstg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s .......................... tl package body for 10s, see techbrief 334 (forto-218ac) .............. tpkg caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. rfh25p08 RFK25P08 -80 -80 -25 -60 20 150 1.2 -55 to 150 300 260 rfh25p10 rfk25p10 -100 -100 -25 -60 20 150 1.2 -55 to 150 300 260 units v v a a v w w/c c c c note: = 250cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage rfh25p08, RFK25P08 rfh25p10, rfk25p10 gate threshold voltage zero gate voltage drain current gate to source leakage current drain to source on resistance (note 2) drain to source on voltage (note 2) turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse-transfer capacitance thermal resistance junction to case symbol bvdss vgs(th) idss 'gss rds(on) vds(on) ld(on) v 'd(off) tf . ciss coss crss r8jc test conditions id = 250na, vgs = 0v vgs = vds. id = 250p,a, (fi9ure 8) vds = rated bvdss. vgs = 0 vds = -8 x rated bvdss. vgs = > tc = 125c vgs = 2ov, vds = ov id = 25a, vgs = -10v, (figures 6, 7) ld = -25a,ves = -10v id - 12.5a, vds = -50v, rgs = sod, (figures 10, 11, 12) vgs = ov, vds = -25v, f = 1 mhz (figure 9) RFK25P08, rfk25p10 min -80 -100 -2 - - - - - - - - - - - - - typ - - - - - - - - 35 165 270 165 - - - - max - - -4 -1 -25 100 0.150 -3.75 50 250 400 250 3000 1500 600 0.83 units v v v ha ma na n v ns ns ns ns pf pf pf c/w source to drain diode specifications parameter source to drain diode voltage (note 2) diode reverse recovery time symbol vsd trr test conditions isd=-12.5a isd = -4a, dlso/dt = 100a/hs min - - typ - 300 max -1.4 - units v ns notes: 2. pulse test: pulse width < 300^5, duty cycle < 2%. 3. repetitive rating: pulse width limited by maximum junction temperature.
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